Papers Published

  1. Tan, T.Y. and Gosele, U., Point defects and diffusion processes in silicon, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications (1984), pp. 151 - 75 .
    (last updated on 2007/04/10)

    The authors review the essential points of two subjects: oxidation effects which established that vacancies (V) and self-interstitials (I) coexist in Si; and Au diffusion into dislocation-free Si which allowed a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. They then discuss topics for which some new understanding is developing within the framework of the coexistence of I and V: the reaching of dynamical equilibrium of I and V; the point defect generating behavior of the (111) Si-SiO2 interface; point defect generation due to nitridation, and the interaction of Au atoms with I and V as a function of temperature

    diffusion in solids;elemental semiconductors;impurity-defect interactions;interstitials;self-diffusion in solids;silicon;vacancies (crystal);