- Sopori, B.L. and Alleman, J. and Chen, W. and Tan, T.Y. and Ravindra, N.M., Grain enhancement of thin silicon layers using optical processing,
Rapid Thermal and Integrated Processing VI. Symposium
pp. 419 - 24 .
(last updated on 2007/04/10)
We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on a metal-coated substrate, followed by grain enhancement using optical/thermal annealing at low temperatures (~500°C). The results show that in thin-layer silicon (<3 μm), grains can be formed in a short time (a few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented
annealing;elemental semiconductors;grain size;semiconductor growth;semiconductor thin films;silicon;solar cells;