Papers Published

  1. Sopori, B.L. and Alleman, J. and Chen, W. and Tan, T.Y. and Ravindra, N.M., Grain enhancement of thin silicon layers using optical processing, Rapid Thermal and Integrated Processing VI. Symposium (1997), pp. 419 - 24 .
    (last updated on 2007/04/10)

    Abstract:
    We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on a metal-coated substrate, followed by grain enhancement using optical/thermal annealing at low temperatures (~500°C). The results show that in thin-layer silicon (<3 μm), grains can be formed in a short time (a few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented

    Keywords:
    annealing;elemental semiconductors;grain size;semiconductor growth;semiconductor thin films;silicon;solar cells;