- S.-Tong Lee and Chen, S. and Braunstein, G. and Kei-Yu Ko and Ott, M.L. and Tan, T.Y., Void formation, electrical activation, and layer intermixing in Si-implanted GaAs/AlGaAs superlattices,
Appl. Phys. Lett. (USA), vol. 57 no. 4
pp. 389 - 91 [1.103701] .
(last updated on 2007/04/10)
Direct experimental evidence is presented for the correlation between void formulation, dopant electrical activation, and layer intermixing in GaAs/AlGaAs superlattices (SLs). Maximum layer intermixing is observed in the regions of maximum carrier concentration and no or little void formation in Si-implanted and annealed SLs. In SLs implanted at room temperature, Si activation and layer intermixing enhancement are severely inhibited in the near-surface region where voids are formed. However, when implantation is carried out at 250°C, both the suppression of Si activation and layer intermixing enhancement in the near-surface region are reduced, concurrent with a decrease in void density
aluminium compounds;carrier density;electrical conductivity of crystalline semiconductors and insulators;elemental semiconductors;gallium arsenide;III-V semiconductors;ion implantation;secondary ion mass spectra;semiconductor superlattices;silicon;voids (solid);