Papers Published

1. Tan, T.Y. and Gosele, U., Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound, J. Appl. Phys. (USA), vol. 53 no. 7 (1982), pp. 4767 - 78 [1.331312] .
   (last updated on 2007/04/10)

   Abstract:
   A kinetic model for the growth and shrinkage of oxidation-induced stacking faults (OSF) in silicon in an oxidizing ambient containing a chlorine compound is developed. The main assumption used in the model is that the vacancy injection rate due to Si-Cl compound formation is essentially independent of the silicon self-interstitial injection rate due to SiO₂ growth. That is, the process of Si-Cl compound formation is not correlated with the process of SiO₂ growth. This permits the authors to calculate the OSF size from R_SF^Cl=1640t^0.75 exp(-2.5/kT)-(4.86×10⁹t/kT) exp(-5.02/kT)-R_Cl, where R_SF^Cl is one half the OSF length (in chlorine oxidation) in cm, t in sec, kT in eV, and R_Cl=bt^m with b and m determined from experimental data. R_Cl represents the further shrinkage of OSF size due to the action of chlorine in addition to that due to stacking fault energy. The agreement between this model and available experimental results is satisfactory. The authors have found that m adopted values between 0.5 and 1, indicating that Si-Cl formation changes from diffusion limited processes to interface reaction limited processes, and this is sensitive to chlorine content in the ambient and to oxidation temperatures. A limited number of data are useful for arriving at the activation energy for vacancy injection due to Si-Cl compound formation of 2-2.5 eV, and for concluding that the most likely Si-Cl compound formed is SiCl

   Keywords:
   diffusion in solids;elemental semiconductors;interface phenomena;interstitials;oxidation;silicon;stacking faults;vacancies (crystal);