Papers Published

  1. Chen, Chang-Ho and Gosele, Ulrich and Tan, Teh Y., Fermi-level effect and junction carrier concentration effect on boron distribution in GexSi1-x/Si heterostructures, Materials Research Society Symposium - Proceedings, vol. 535 (1999), pp. 275 - 280 .
    (last updated on 2007/04/10)

    Abstract:
    Dopant segregation mechanism in general involves the chemical effect, the Fermi-level effect, and the effect of the junction carrier concentrations. Satisfactory fits of available B distribution profiles in GexSi1-x/Si heterostructures have been obtained using such a model, but with the chemical effect not important. The Fermi-level effect determines the difference in the ionized B solubilities in GexSi1-x and Si. The singly-positively charged crystal self-interstitials I+ governs the boron diffusion process. The junction carrier concentration affects the cocentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction.

    Keywords:
    Semiconducting germanium compounds;Semiconducting silicon;Semiconducting boron;Fermi level;Carrier concentration;Composition effects;Diffusion;Semiconductor doping;Semiconductor device models;