Papers Published

1. Tsu, R. and Baglin, J.E. and Tan, T.Y. and Tsai, M.Y. and Park, K.C. and Hodgson, R., Laser recrystallization of ion-implanted Si by frequency-doubled Nd:YAG laser, AIP Conf. Proc. (USA) no. 50 (1978), pp. 344 - 50 .
   (last updated on 2007/04/10)

   Abstract:
   The authors have investigated the recrystallization of ion-implanted amorphous Si using a frequency-doubled, 10^-8 s pulsed Nd:YAG laser. The samples used had been implanted with As ions in the energy range 50 to 140 keV, at dosages between 10¹⁴ and 2×10¹⁷ cm^-2. The threshold energy density is approximately 0.5 J/cm². Using depth profiles obtained from He-ion backscattering, they have established that the resistivity displays the well known concentration dependence. Raman spectra of laser annealed samples have also been used to characterize the stages of anneal. In particular, the Fano shift of the phonon frequency gives an indirect measure of the carrier concentration. Preliminary TEM studies show an annealed sample 2×10¹⁵ As/cm² to be almost free of dislocation at 0.7 J/cm². It is possible to avoid surface damage by proper selection of energy densities

   Keywords:
   amorphous semiconductors;arsenic;carrier density;doping profiles;electrical conductivity of crystalline semiconductors and insulators;elemental semiconductors;ion implantation;laser beam effects;particle backscattering;Raman spectra of inorganic solids;recrystallisation annealing;silicon;transmission electron microscope examination of materials;