Papers Published

  1. Gosele, U. and Ahn, K.-Y. and Marioton, B.P.R. and Tan, T.Y. and Lee, S.-T., Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?, Appl. Phys. A, Solids Surf. (West Germany), vol. A48 no. 3 (1989), pp. 219 - 28 .
    (last updated on 2007/04/10)

    Abstract:
    In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The authors examine the possibility of this fast diffusing species being molecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context

    Keywords:
    defect electron energy states;diffusion in solids;elemental semiconductors;impurities;oxygen;silicon;