Papers Published

  1. Gosele, U. and Tan, T.Y., The nature of point defects and their influence on diffusion processes in silicon at high temperatures, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 45 - 59 .
    (last updated on 2007/04/10)

    Highlights recent progress in understanding the role of vacancies and self-interstitials in self- and impurity diffusion in silicon above about 700°C. How surface oxidation of silicon leads to a perturbation of the point-defect population is described. An analysis of the resulting oxidation-enhanced or -retarded diffusion of group III and group V dopants shows that under thermal equilibrium as well as under oxidation conditions both vacancies and self-interstitials are present. For sufficiently long times vacancies and self-interstitials attain dynamical equilibrium which involves their recombination and spontaneous thermal creation in the bulk of silicon crystals. The existence and the nature of a recombination barrier slowing down the recombination process are discussed in this context. Recent experimental and theoretical results on the diffusion of gold in silicon enable the authors to determine the self-interstitial component of silicon self-diffusion and to obtain an estimate of the respective vacancy contribution. The two components turn out to be of the same order of magnitude from 700°C up to the melting point

    diffusion in solids;elemental semiconductors;interstitials;oxidation;self-diffusion in solids;silicon;vacancies (crystal);