Papers Published

  1. Tan, T.Y. and Gosele, U., Diffusion mechanisms and superlattice disordering in GaAs, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. (Switzerland), vol. B1 no. 1 (1988), pp. 47 - 65 [0921-5107(88)90030-X] .
    (last updated on 2007/04/10)

    The paper reports recent progress in the understanding of mechanisms of gallium self-diffusion, of impurity diffusion, and of doping-enhanced superlattice disordering in GaAs. An analysis of the available results of Ga-Al interdiffusion in GaAs/AlAs superlattices allows the authors to conclude that gallium self-diffusion in GaAs is carried by triply negatively charged gallium vacancies under intrinsic and n-doping conditions. The mechanism of the enhanced superlattice disordering due to silicon doping is the Fermi-level effect which increases the concentrations of the charged point-defect species

    aluminium compounds;diffusion in solids;Fermi level;gallium arsenide;III-V semiconductors;semiconductor doping;semiconductor junctions;semiconductor superlattices;vacancies (crystal);