Papers Published

  1. Chang-Ho Chen and Gosele, U.M. and Tan, T.Y., Fermi-level effect and junction carrier concentration effect on boron distribution in GexSi1-xSi heterostructures, III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium (1999), pp. 275 - 80 .
    (last updated on 2007/04/10)

    Dopant segregation mechanism in general involves the chemical effect, the Fermi-level effect, and the effect of the junction carrier concentrations. Satisfactory fits of available B distribution profiles in GexSi1-xSi heterostructures have been obtained using such a model, but with the chemical effect not important. The Fermi-level effect determines the difference in the ionized B solubilities in GexSi1-x and Si. The singly-positively charged crystal self-interstitials I+ governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction

    boron;carrier density;diffusion;doping profiles;elemental semiconductors;Fermi level;Ge-Si alloys;interstitials;segregation;semiconductor heterojunctions;semiconductor materials;silicon;