Papers Published

1. Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Formation mechanism of epitaxial CoSi₂ films on (001)Si using Ti-Co bimetallic layer source materials, Evolution of Surface and Thin Film Microstructure Symposium (1993), pp. 603 - 8 .
   (last updated on 2007/04/10)

   Abstract:
   The mechanism of formation of epitaxial CoSi₂ film on (001)Si substrate, produced using sequentially deposited Ti-Co bimetallic layer source materials for which Ti was deposited onto the Si substrates first, has been studied by observing the Co silicide formation processes and structures in samples prepared by isochronal annealing and by isothermal annealing. The results demonstrated that, in leading to epitaxial CoSi₂ film formation, Ti has played two roles. It has served as a barrier material to Co atoms and thus preventing Co₂Si from forming. More importantly, it has allowed nucleation and growth of epitaxial CoSi₂ to dominate the Co silicide film formation process, apparently because it has served as a cleanser to remove native oxide from the Si substrate surface

   Keywords:
   annealing;cobalt compounds;elemental semiconductors;interface structure;metallisation;nucleation;semiconductor-metal boundaries;silicon;solid phase epitaxial growth;