Papers Published

  1. Tan, T. Y. and Goesele, U., POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON., Proceedings - The Electrochemical Society, vol. 84-7 (1984), pp. 151 - 175 .
    (last updated on 2007/04/10)

    We review two subjects: oxidation effects which established that vacancies (V) and self-interstitials (I) coexist in Si; and Au diffusion into dislocation-free Si which allowed a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. We then discuss topics for which some new understanding is developing within the framework of the coexistence of I and V: reaching dynamical equilibrium of I and V; the point defect generating behavior of the (111) Si-SiO//2 interface; point defect generation due to nitridation; and the interaction of Au atoms with I and V as a function of temperature.