Papers Published

  1. Tan, T.Y., Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions, Appl. Phys. Lett. (USA), vol. 34 no. 10 (1979), pp. 714 - 716 [1.90616] .
    (last updated on 2007/04/10)

    Abstract:
    Faint residual fringe contrast was observed in some regions of stacking faults (SF) in Si for which unfaulting reactions had apparently occurred. This phenomenon is attributed to an error which occurred in the apparent unfaulting process. Such an error produces, for the simplest case, a four-atom-layer-thick region on the 111 which was twinned and may also be regarded as normal 111 layers of matrix material containing an intrinsic-extrinsic SF pair. Thus, no normal SF contrast was observed; instead, the small twin boundary dilations produced the SF-like faint fringe contrast. Twin reflections were observed from such material regions

    Keywords:
    elemental semiconductors;silicon;stacking faults;transmission electron microscope examination of materials;