- Tan, T.Y., Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon,
Philos. Mag. A, Phys. Condens. Matter Defects Mech. Prop. (UK), vol. 44 no. 1
pp. 101 - 25 .
(last updated on 2007/04/10)
An energetically favourable atomic modelling scheme for homogeneous nucleation of dislocations in silicon by condensation of point defects is described. For extrinsic dislocation dipoles, a chain of interstitial atoms is used to form intermediate defect configurations having non-six-membered atomic rings with matrix atoms. For intrinsic dislocation dipoles, a chain of matrix atoms is cut out and the remaining atoms surrounding the cut are used to form intermediate defect configurations having non-six-membered atomic rings. Climb and glide motions of the intermediate defect configurations then produce the 90° edge, the 60° and the Frank partial dislocation dipoles. The intermediate defect configurations and the dislocation dipoles generated have 〈110〉 rod-like morphologies. A model with all four-coordinated interstitial atoms for 113 stacking fault is also obtained
dislocation climb;dislocation dipoles;dislocation nucleation;elemental semiconductors;point defects;silicon;slip;stacking faults;