Papers Published

  1. Krakow, W. and Tan, T.Y. and Foell, H., Detection of point defect chains in ion irradiated silicon by high resolution electron microscopy, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 185 - 90 .
    (last updated on 2007/04/10)

    In a lattice imaging study of As+ ion damaged Si, the authors have detected ⟨110⟩ chain type defects which are not associated with any significant strain or configurational changes. By image matching of the experimental and calculated micrographs of vacancies and interstitials, it is established that about 100% more interstitial atoms may incorporate into a defective chain. A structure model of this defect is proposed wherein a di-interstitial, occupying the ⟨100⟩ split position, is incorporated into every available site along a ⟨110⟩ chain

    arsenic;crystal defects;elemental semiconductors;interstitials;ion implantation;silicon;transmission electron microscope examination of materials;vacancies (crystal);