Papers Published

  1. Tice, W.K. and Tan, T.Y. and Geipel, H.J., The isochronal annealing behavior of silicon implanted with arsenic ions, Electrochemical Society Fall Meeting. (Extended abstracts only received) (1976), pp. 863 - 4 .
    (last updated on 2007/04/10)

    The study was undertaken to provide a physical basis for understanding sheet resistivity behavior. Single crystal (001) silicon wafers were first implanted through a 200 Å screen oxide with 8×1015 arsenic ions/cm2 at 150 keV. Samples were then annealed isochronally (30 min.) in the temperature range 400 to 1100°C, at 100°C intervals. Sheet resistivity measurements were taken at room temperature with a four point probe. The implanted region was finally observed with a transmission electron microscope to correlate sheet resistivity with defect structures. Results show that three commonly identifiable ranges of electrical activity as a function of annealing temperature are each associated with a distinct type of defect structure

    annealing;arsenic;crystal defects;electrical conductivity of crystalline semiconductors and insulators;elemental semiconductors;ion implantation;semiconductor doping;silicon;