- Tice, W.K. and Tan, T.Y. and Geipel, H.J., The isochronal annealing behavior of silicon implanted with arsenic ions,
Electrochemical Society Fall Meeting. (Extended abstracts only received)
pp. 863 - 4 .
(last updated on 2007/04/10)
The study was undertaken to provide a physical basis for understanding sheet resistivity behavior. Single crystal (001) silicon wafers were first implanted through a 200 Å screen oxide with 8×1015 arsenic ions/cm2 at 150 keV. Samples were then annealed isochronally (30 min.) in the temperature range 400 to 1100°C, at 100°C intervals. Sheet resistivity measurements were taken at room temperature with a four point probe. The implanted region was finally observed with a transmission electron microscope to correlate sheet resistivity with defect structures. Results show that three commonly identifiable ranges of electrical activity as a function of annealing temperature are each associated with a distinct type of defect structure
annealing;arsenic;crystal defects;electrical conductivity of crystalline semiconductors and insulators;elemental semiconductors;ion implantation;semiconductor doping;silicon;