Papers Published

  1. Tan, T.Y. and Gafiteanu, R. and Joshi, S.M. and Gosele, U., Science and modeling of impurity gettering in silicon, Proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. Silicon Materials Science and Technology, vol. vol.2 (1998), pp. 1050 - 63 .
    (last updated on 2007/04/10)

    For IC applications, intrinsic gettering using oxide precipitates in CZ Si has been extensively investigated, with the main emphasis on the creation of the gettering sites. While this subject is discussed, in the present review we emphasize recent sites. Advances in the understanding of a variety of processes and mechanisms of gettering yield-detracting metallic impurities from the device active regions to the created gettering regions. Directions of ULSI and SOI gettering needs are mentioned

    elemental semiconductors;getters;integrated circuit technology;precipitation;silicon;silicon-on-insulator;ULSI;