Papers Published

  1. Rogers, W.B. and Massoud, H.Z. and Fair, R.B. and Gosele, U.M. and Tan, T.Y. and Rozgonyi, G.A., The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon, J. Appl. Phys. (USA), vol. 65 no. 11 (1989), pp. 4215 - 19 [1.343303] .
    (last updated on 2007/04/10)

    The retardation phenomenon of oxygen precipitation in Czochralski silicon has been studied simultaneously with the growth of surface stacking faults under a silicon nitride capping layer. The surface faults were intentionally introduced to monitor the bulk self-interstitial supersaturation in the crystal during precipitate growth. It was observed that an increase in the low-temperature nucleation anneal time resulted in a reduced rate of oxygen precipitation and an enhanced rate of surface stacking fault growth at high temperatures. This indicates that as the nucleation time increases, silicon self-interstitials, which must be generated for precipitation to proceed, reach a high-level of supersaturation and cause the annihilation of most nuclei generated during the nucleation anneal

    annealing;elemental semiconductors;interstitials;oxygen;precipitation;silicon;stacking faults;