Papers Published

  1. Tan, T.Y. and Lee, S.T. and Gosele, U., Modeling growth directional features of silicon nanowires obtained using SiO, Materials Research Society Symposium - Proceedings, vol. 719 (2002), pp. 235 - 240 .
    (last updated on 2007/04/10)

    Abstract:
    Growth directional features of silicon nanowires (SiNW) obtained using silica (SiO) were discussed. Nanowires were produced through vapor-liquid-solid (VLS) reactions, oxide assisted methods using unstable semiconductor-oxide source materials either by thermal evaporation or by laser ablation. The growth directional features of these nanowires were also documented.

    Keywords:
    Semiconducting silicon;Silica;Semiconductor growth;Dislocations (crystals);Laser ablation;Evaporation;