Papers Published

  1. Gosele, U. and Plossl, A. and Tan, T.Y., The influence of carbon on the effective diffusivities of intrinsic point defects in silicon, Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology (1996), pp. 309 - 23 .
    (last updated on 2007/04/10)

    Recent experimental results from AT&T suggest that the frequently observed slow effective diffusivity of silicon self-interstitials is due to trapping by carbon atoms and not as had previously been assumed due to recombination with the much more abundant vacancies. This paper tries to put this suggestion into the larger context of point defect phenomena in silicon, including swirl defect formation. It appears that both self-interstitial trapping by carbon atoms and self-interstitial recombination with vacancies need to be considered. Many questions remain to be answered before a consistent point defect picture may emerge

    carbon;diffusion;elemental semiconductors;interstitials;silicon;vacancies (crystal);