Papers Published

  1. Tan, T.Y. and Gosele, U., Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon, Appl. Phys. Lett. (USA), vol. 40 no. 7 (1982), pp. 616 - 19 [1.93200] .
    (last updated on 2007/04/10)

    An analysis of the conditions for obtaining oxidation-enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self-interstitials coexist at high temperatures and that during oxidation a local equilibrium of point defects is attained. It is shown that the Sb ORD data can be explained quantitatively. Under most oxidation conditions the SiO2-Si interface acts as a source of Si self-interstitials, but at sufficiently high temperatures and long oxidation times the SiO2-Si interface behaves as a sink for Si self-interstitials (or equivalently as a source of vacancies). The authors suggest a model for this sink behavior in terms of the formation of SiO molecules at the interface and of their subsequent diffusion into the SiO2 film

    diffusion in solids;elemental semiconductors;interstitials;oxidation;silicon;stacking faults;vacancies (crystal);