Papers Published

  1. Plekhanov, P.S. and Gosele, U.M. and Tan, T.Y., Physical and numerical modeling of gettering of precipitated metallic impurities in Si, AIP Conf. Proc. (USA) no. 462 (1999), pp. 412 - 17 .
    (last updated on 2007/04/10)

    Numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated nonradiative minority carrier lifetime change in the course of gettering is used as a tool in evaluating the gettering efficiency. Derivation of capture cross section of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of conventional application of gettering process is explained by the modeling results. Variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times

    carrier lifetime;getters;impurities;minority carriers;semiconductor device models;solar cells;