Papers Published

  1. Tan, T.Y. and Gosele, U., Growth kinetics of oxidation-induced stacking faults in silicon: a new concept, Appl. Phys. Lett. (USA), vol. 39 no. 1 (1981), pp. 86 - 8 [1.92526] .
    (last updated on 2007/04/10)

    It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. The authors propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2

    elemental semiconductors;interstitials;oxidation;silicon;stacking faults;viscoelasticity;