Papers Published

  1. Marioton, B. P. R. and Gosele, U. and Tan, T. Y., ARE SELF-INTERSTITIALS REQUIRED TO EXPLAIN NONEQUILIBRIUM DIFFUSION PHENOMENON IN SILICON?, Chemtronics, vol. 1 no. 4 (1986), pp. 156 - 160 .
    (last updated on 2007/04/10)

    The possibility that vacancies are the only type of intrinsic point defects present in silicon is investigated using enhanced and retarded diffusion phenomena of substitutional dopants, such as oxidation-enhanced diffusion (OED) and oxidation-retarded diffusion (ORD). It is shown that an undersaturation of vacancies leads to enhanced dopant diffusion, if this diffusion occurs predominantly via an interstitial-substitutional diffusion mechanism (Frank-Turnbull mechanism). This model is in accord with the observed doping dependence of dopant diffusion. However, a quantitative treatment of the growth of oxidation-induced stacking faults shows that the presence of self-interstitials is required to explain the experimental data.

    DIFFUSION - Mathematical Models;