Papers Published

  1. Gafiteanu, R. and Chevacharoenkul, S. and Gosele, U.M. and Tan, T.Y., Twist boundaries in silicon: a model system, Microscopy of Semiconducting Materials 1993. Proceedings of the Royal Microscopical Society Conference (1993), pp. 87 - 90 .
    (last updated on 2007/04/10)

    A combination of layer transfer and hydrophobic silicon wafer bonding was used to obtain a structure consisting of a single crystalline Si layer (≅2 μm) rotationally misoriented on top of a (100) Si wafer. Because of the close proximity of the boundary to the surface and non-damaging method of preparation, this structure constitutes an adequate model system for studying the impact of processing on twist boundaries in silicon. Low-angle ⟨001⟩Σ=1 twist boundaries before and after high concentration phosphorus diffusion have been studied using bright- and dark-field imaging conditions, electron diffraction and lattice-fringe imaging. Further possible applications are discussed

    diffusion in solids;electron diffraction examination of materials;elemental semiconductors;phosphorus;silicon;transmission electron microscope examination of materials;twist boundaries;wafer bonding;