Papers Published

  1. Tan, T.Y. and Foll, H. and Krakow, W., Detection of extended interstitial chains in ion-damaged silicon, Appl. Phys. Lett. (USA), vol. 37 no. 12 (1980), pp. 1102 - 4 [1.91888] .
    (last updated on 2007/04/10)

    The authors have carried out a high-resolution electron microscope lattice imaging study of As+ ion-damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated, ⟨110⟩ chain-type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di-interstitial occupying the ⟨100⟩ split position is incorporated into every available site along a ⟨110⟩ chain

    dislocation dipoles;electron microscope examination of materials;elemental semiconductors;interstitials;ion beam effects;silicon;