- Tan, T.Y. and Gosele, U., Mechanisms of self-diffusion and of doping-enhancement of superlattice disordering in GaAs and AlAs compounds,
Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium
pp. 221 - 32 .
(last updated on 2007/04/10)
An understanding of the mechanisms of self-diffusion and of interdiffusion in the compound materials GaAs and AlAs may be arrived at by noting the effects of (i) charge, (ii) As pressure, and (iii) point defect supersaturation, on the doping enhanced superlattice disordering phenomena. The Ga self-diffusion (and hence GaAl interdiffusion) is dominated by the triply-negatively-charged Ga (or Al) vacancy, V_Ga3-, under intrinsic and n-doping conditions. Under p-doping, a positively charged Ga self-interstitial I_Gam+, with m not known, contributes to the Ga(Al) diffusion process. Less is known for the group V element diffusion, but the As vacancy (V_As) should be contributing under intrinsic and n-doping conditions while the As self-interstitial (I_As) may be contributing under p-doping. The contribution of a defect pair may also be involved under p-doping
aluminium compounds;chemical interdiffusion;gallium arsenide;III-V semiconductors;point defects;self-diffusion in solids;semiconductor doping;semiconductor superlattices;vacancies (crystal);