- Foell, H. and Tan, T.Y. and Krakow, W., Undissociated dislocations and intermediate defects in As+ ion damaged silicon,
Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting
pp. 173 - 7 .
(last updated on 2007/04/10)
Undissociated dislocation dipoles and intermediate defects are detected in As+ ion damaged Si using the lattice resolution technique of transmission electron microscopy. The present results are consistent with the authors' dislocation nucleation models
arsenic;dislocation dipoles;dislocation nucleation;elemental semiconductors;ion implantation;silicon;transmission electron microscope examination of materials;