Papers Published

1. Foell, H. and Tan, T.Y. and Krakow, W., Undissociated dislocations and intermediate defects in As⁺ ion damaged silicon, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting (1981), pp. 173 - 7 .
   (last updated on 2007/04/10)

   Abstract:
   Undissociated dislocation dipoles and intermediate defects are detected in As⁺ ion damaged Si using the lattice resolution technique of transmission electron microscopy. The present results are consistent with the authors' dislocation nucleation models

   Keywords:
   arsenic;dislocation dipoles;dislocation nucleation;elemental semiconductors;ion implantation;silicon;transmission electron microscope examination of materials;