Papers Published

  1. Braunig, D. and Yang, K.H. and Tan, T.Y. and Schneider, C.P., In depth generation lifetime profiling of heat-treated Czochralski silicon, Phys. Status Solidi A (East Germany), vol. 92 no. 1 (1985), pp. 327 - 35 .
    (last updated on 2007/04/10)

    A technique is given for measuring the MOS generation lifetime of minority carriers as a function of depth from the silicon wafer surface. The technique monitors a transient current instead of the more commonly utilized transient capacitance, and is capable of obtaining a whole in-depth lifetime profile in one measurement. Heat treated silicon wafers examined in this study exhibit a constant high lifetime close to the wafer surface, and the lifetime decreases toward the bulk. This is correlated to SiO2 precipitation and gettering behavior

    carrier lifetime;elemental semiconductors;heat treatment;metal-insulator-semiconductor structures;minority carriers;silicon;