Papers Published

  1. Tong, Q.-Y. and Scholz, R. and Gosele, U. and Lee, T.-H. and Huang, L.-J. and Chao, T.-L. and Tan, T.Y., A “smarter-cut“ approach to low temperature silicon layer transfer, Appl. Phys. Lett. (USA), vol. 72 no. 1 (1998), pp. 49 - 51 [1.120601] .
    (last updated on 2007/04/10)

    Silicon wafers were first implanted at room temperature by B+ with 5.0×1012 to 5.0×1015 ions/cm2 at 180 keV, and subsequently implanted by H2+ with 5.0×1016 ions/cm2 at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B-H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200°C

    annealing;boron;elemental semiconductors;hydrogen;ion implantation;semiconductor doping;silicon;wafer bonding;