Papers Published

  1. Tan, T.Y. and Gosele, U., Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs, Appl. Phys. Lett. (USA), vol. 52 no. 15 (1988), pp. 1240 - 2 [1.99168] .
    (last updated on 2007/04/10)

    Abstract:
    Recently available Ga-Al interdiffusion results in GaAs/AlAs superlattices allow the authors to conclude that Ga self-diffusion in GaAs is carried by triply negative charged Ga vacancies under intrinsic and n-doping conditions. The mechanism of the Si-enhanced superlattice disordering is the Fermi-level effect which increases the concentrations of the charged point defect species. For the effect of the p dopants Be and Zn, the Fermi-level effect has to be considered together with dopant diffusion induced Ga self-interstitial supersaturation or undersaturation. Self-diffusion of Ga in GaAs under heavy p-doping conditions is governed by positively charged Ga-self-interstitials

    Keywords:
    aluminium compounds;Fermi level;gallium arsenide;III-V semiconductors;interstitials;self-diffusion in solids;semiconductor superlattices;vacancies (crystal);