- Tong, Q.-Y. and Lee, T.-H. and Kim, W.-J. and Tan, T.Y. and Gosele, U., Feasibility study of VLSI device layer transfer by CMP PETEOS direct bonding,
1996 IEEE International SOI Conference Proceedings (Cat. No.35937)
pp. 36 - 7 [SOI.1996.552481] .
(last updated on 2007/04/10)
Reports here the first results of using plasma enhanced CVD TEOS (Si(C2H5O)4) oxide (PETEOS) and associated CMP (Chemical Mechanical Polishing) technology to form a flat layer on the surface of a processed VLSI bulk Si wafer for direct bonding. The undoped PETEOS oxide has also been used as a bonding layer for substrates onto which the IC layer is to be transfered and whose surfaces are not favorable for bonding
integrated circuit technology;plasma CVD;polishing;VLSI;wafer bonding;