- Hsia, S.L. and Tan, T.Y. and Smith, P.L. and McGuire, G.E., Characterization of epitaxial CoSi2 growth on (001) silicon using Ti-Co bilayer sources,
Proceeding of the Sixteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVI) and the Symposium on Materials and Processing Issues for Large Scale Integrated Electronic and Photonic Arrays
pp. 74 - 84 .
(last updated on 2007/04/10)
Using a Ti-Co bimetallic layer as a silicidation source on Si substrates, epitaxial CoSi2 films have been grown on (001) Si via rapid thermal annealing. The film resistivity and the resistance thermal stability are excellent. The Ti layer plays the important role in the early stage of the annealing process of cleaning up the surface native oxide and preventing the formation of randomly oriented Co2Si or CoSi grains. The epitaxial CoSi2 films are very stable under additional rapid thermal annealing treatment at 1100 °C for times from 10 to 60 s, suitable for VLSI applications. The quality of the further annealed film has been actually improved. The epitaxial CoSi2 resistivity is determined to be a low as 10 μΩ-cm after the 1100°C annealing. Mechanisms responsible for the excellent quality of the CoSi2 formed using the bimetallic Ti-Co source, as well as for the unacceptable quality of the polycrystalline silicide films fabricated using the single Co layer as source material, are discussed
cobalt compounds;electronic conduction in crystalline semiconductor thin films;incoherent light annealing;rapid thermal processing;semiconductor epitaxial layers;semiconductor growth;semiconductor materials;transmission electron microscope examination of materials;vapour phase epitaxial growth;X-ray chemical analysis;