- Tan, T.Y. and Gardner, E.E. and Tice, W.K., Intrinsic gettering by oxide precipitate induced dislocations in Czochralski silicon,
Electrochemical Society Spring Meeting (papers in extended summary form only received)
pp. 198 - 200 .
(last updated on 2007/04/10)
Describes the influence of intrinsic gettering on bipolar leakage limited yields
crystal growth from melt;elemental semiconductors;impurity-dislocation interactions;precipitation;semiconductor growth;silicon;