Papers Published

  1. Tan, T.Y. and Gardner, E.E. and Tice, W.K., Intrinsic gettering by oxide precipitate induced dislocations in Czochralski silicon, Electrochemical Society Spring Meeting (papers in extended summary form only received) (1977), pp. 198 - 200 .
    (last updated on 2007/04/10)

    Describes the influence of intrinsic gettering on bipolar leakage limited yields

    crystal growth from melt;elemental semiconductors;impurity-dislocation interactions;precipitation;semiconductor growth;silicon;