- Jager, W. and Rucki, A. and Urban, K. and Hettwer, H.-G. and Stolwijk, N.A. and Mehrer, H. and Tan, T.Y., Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: competition of two thermodynamic driving forces,
Microscopy of Semiconducting Materials 1993. Proceedings of the Royal Microscopical Society Conference
pp. 531 - 4 .
(last updated on 2007/04/10)
Defect formation and evolution during Zn indiffusion into GaAs at 900°C has been characterized. Using a pure Zn source, the Zn profile is box-shaped and the Zn diffused region contains dislocations and void/Ga-precipitate pairs, with the void to precipitate volume ratio being essentially constant. Using As also in the source, the Zn profile is of the kink-and-tail type with the Zn diffused region containing the same kinds of defects. However, only in the profile tail region the Ga precipitate to void volume ratio is large, while in the region of the profile at high Zn concentration near the surface only voids are present. This shows that indiffusion of high concentrations of Zn produces Ga-rich GaAs crystals, but in the As-rich diffusion ambient case the surface region has been subsequently converted into being rich in As
diffusion in solids;dislocations;gallium arsenide;III-V semiconductors;precipitation;thermodynamic properties;voids (solid);zinc;