Papers Published

  1. Taylor, W. and Marioton, B.P.R. and Tan, T.Y. and Gosele, U., The diffusivity of silicon self-interstitials, Radiat. Eff. Defects Solids (UK), vol. 111-112 no. 1-2 (1989), pp. 131 - 50 .
    (last updated on 2007/04/10)

    Abstract:
    The diffusivity Dl of silicon self-interstitials plays an important role in the quantitative modeling of many technological processes for microelectronic and photovoltaic silicon devices. Examples are swirl-defect formation during crystal growth, oxygen precipitation, oxidation-enhanced diffusion, oxidation-induced stacking faults, gettering phenomena, and nonequilibrium effects associated with high-concentration phosphorus diffusion. This paper reviews the various attempts to measure or estimate Dl, which in spite of all the effort remains a fairly elusive quantity partly because of interactions of self-interstitials with co-existing vacancies and sinks in the material

    Keywords:
    elemental semiconductors;interstitials;self-diffusion in solids;silicon;