Papers Published
- Geipel, H.J. and Shasteen, R.B. and Tan, T.Y. and Tice, W.K., Control of stacking fault generation in recessed oxide processing,
IBM Tech. Discl. Bull. (USA), vol. 21 no. 4
,
pp. 1373 - .
(last updated on 2007/04/10)Abstract:
Typically, a standard semi-recessed oxidation process (SROX) can generate a large number of stacking faults under the recessed thick oxide, which is manifested in unacceptably low carrier lifetimes and high leakage current. The defect density can be improved from >1000 defects/cm2 to <10 defects/cm2 by implementing backside ion implantation of a suitable element (e.g., B, Ar or Xe) at an optimized energy and dose [1×1014 to 1×1016/cm2]. The defect control mechanism must be introduced at a particular portion of the process prior to growing the thick recessed thermal oxide. The process must be employed prior to the application of the pyrolytic oxide used for photoresist adhesionKeywords:
ion implantation;oxidation;semiconductor technology;stacking faults;