- Geipel, H.J. and Shasteen, R.B. and Tan, T.Y. and Tice, W.K., Control of stacking fault generation in recessed oxide processing,
IBM Tech. Discl. Bull. (USA), vol. 21 no. 4
pp. 1373 - .
(last updated on 2007/04/10)
Typically, a standard semi-recessed oxidation process (SROX) can generate a large number of stacking faults under the recessed thick oxide, which is manifested in unacceptably low carrier lifetimes and high leakage current. The defect density can be improved from >1000 defects/cm2 to <10 defects/cm2 by implementing backside ion implantation of a suitable element (e.g., B, Ar or Xe) at an optimized energy and dose [1×1014 to 1×1016/cm2]. The defect control mechanism must be introduced at a particular portion of the process prior to growing the thick recessed thermal oxide. The process must be employed prior to the application of the pyrolytic oxide used for photoresist adhesion
ion implantation;oxidation;semiconductor technology;stacking faults;