Papers Published

1. Schultz, M. and Egger, U. and Scholz, R. and Breitenstein, O. and Gosele, U. and Tan, T.Y., Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide, J. Appl. Phys. (USA), vol. 83 no. 10 (1998), pp. 5295 - 301 [1.367354] .
   (last updated on 2007/04/10)

   Abstract:
   Interdiffusion experiments with GaAsP/GaAs and GaAsSb/GaAs superlattice samples were performed at various temperatures and arsenic vapor pressures. From the depth-concentration profiles effective diffusion coefficients were calculated. The dependence of these effective diffusion coefficients on the ambient arsenic pressure led to the conclusion that the interdiffusion process is governed by a substitutional-interstitial diffusion mechanism. The good agreement of the effective diffusion coefficients of the GaAsP/GaAs and GaAsSb/GaAs samples with each other and the agreement with arsenic self-diffusion data from the literature is an indication that phosphorus and antimony have good tracer properties to investigate arsenic self diffusion. Comparing our results with sulfur in-diffusion experiments from the literature we conclude that the kick-out mechanism governs self-diffusion on the arsenic sublattice in GaAs. Our results are in contradiction to arsenic self-diffusion experiments which indicated a vacancy mechanism

   Keywords:
   chemical interdiffusion;gallium arsenide;gallium compounds;III-V semiconductors;self-diffusion;semiconductor superlattices;