Papers Published

  1. Corbett, J.W. and Karins, J.P. and Tan, T.Y., Ion-induced in semiconductors, Nucl. Instrum. Methods (Netherlands), vol. 182-183 (1), pp. 457 - 76 [0029-554X(81)90717-5] .
    (last updated on 2007/04/10)

    The status of our knowledge of ion-induced defects in semiconductors will be reviewed, including the charge-state dependence of defects, novel defect migration mechanism and enhanced damage production mechanisms. The main emphasis will be on defects in silicon where a panorama of defects is emerging which encompasses the evolution of damage from vacancies and interstitials and their aggregates to stacking faults and dislocations to disordered zones and the development of an amorphous layer

    diffusion in solids;interstitials;ion beam effects;ion implantation;reviews;semiconductor doping;semiconductors;vacancies (crystal);