- DEFECTS IN SEMICONDUCTORS, PROCEEDINGS OF THE MATERIALS RESEARCH SOCIETY ANNUAL MEETING, 1980., edited by Narayan, Jaydish;Tan, T. Y.;,
Materials Research Society Symposia Proceedings, vol. 2
pp. 537 - .
(last updated on 2007/04/10)
Proceedings includes 51 papers divided into seven chapters covering defects and characterization techniques; radiation-induced defects and annealing processes; properties of dislocations and interfaces; crystal growth and defects; oxygen precipitation and thermal oxidation related defects; laser annealing; and defects in compound semiconductors. Topics considered include recent advances in defect characterization, nucleation, macroscopic defects, ion implantation, neutron damage, silicon, gallium arsenide, crystals, semiconductor device manufacture, and impurities. Technical and professional papers from this conference are indexed with the conference code no. 00102 in the Ei Engineering Meetings (TM) database produced by Engineering Information, Inc.
SEMICONDUCTING SILICON;SEMICONDUCTING GALLIUM ARSENIDE;SEMICONDUCTOR DEVICES;CRYSTALS;