Papers Published

  1. Uematsu, M. and Werner, P. and Schultz, M. and Tan, T.Y. and Gosele, U.M., Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs, Appl. Phys. Lett. (USA), vol. 67 no. 19 (1995), pp. 2863 - 5 [1.114810] .
    (last updated on 2007/04/10)

    A quantitative determination of the contribution of as self-interstitials to the as self-diffusion coefficient in GaAs has been carried out. Values of the as self-interstitial contributions are deduced from sulfur indiffusion profiles in GaAs, which are simulated based on the kick-out mechanism. Furthermore, the relative contributions of as self-interstitials and of as vacancies are discussed

    gallium arsenide;III-V semiconductors;interstitials;self-diffusion;vacancies (crystal);