- Oehrlein, G.S. and Tan, T.Y. and Kleinhenz, R.L. and Lindstrom, J.L., On the question of oxygen diffusion during oxygen related thermal donor formation in silicon,
Materials Issues in Silicon Integrated Circuit Processing Symposium
pp. 65 - 7 .
(last updated on 2007/04/10)
In an attempt to decide whether enhanced oxygen diffusion is important for heat-treatments of silicon at ~450°C where thermal donors are formed the authors have conducted two types of experiments aimed at providing a measure of the `effective' oxygen diffusivity. First, they have extensively measured the temperature dependence of the thermal donor introduction rate for very short heat treatment times (20 min). This measurement provides the thermal activation energy of TD formation. Since effects of long range diffusion and formation of large oxygen clusters are negligible for such times and temperatures and, presumably, thermal donor formation at the lowest heat treatment temperatures is oxygen diffusion limited, it should be possible to interpret the obtained activation energy in terms of oxygen diffusivity. The change of the interstitial oxygen content is immeasurable for 20 min heat treatment times. Therefore, the decay of the interstitial oxygen content was measured for longer heat treatments at 450°C (up to 500 hours)
diffusion in solids;elemental semiconductors;heat treatment;impurity electron states;oxygen;silicon;