Papers Published

  1. Negoita, M.D. and Tan, T.Y., Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect, J. Appl. Phys. (USA), vol. 95 no. 1 (2004), pp. 191 - 8 [1.1630701] .
    (last updated on 2007/04/10)

    The contribution of metallic precipitates to carrier generation has been modeled for metal-oxide-semiconductor (MOS) capacitor devices fabricated using Si, with the precipitate located in the depletion region of the device. The physical mechanism responsible for the electrical activity of the metallic precipitate is attributed to the Schottky junction property between the precipitate and the Si matrix materials. The precipitate serves as a highly effective carrier generation center when the capacitor is switched from the accumulation mode to the deep depletion mode. As a practical case, the electrical activity of the Cu3Si precipitate is investigated and the impact of the precipitate located at different positions within the depleted region of the MOS capacitor on the device performance degradation is analyzed

    carrier mobility;elemental semiconductors;MOS capacitors;precipitation;Schottky barriers;semiconductor device models;silicon;