Papers Published

  1. Gosele, U. and Tan, T.Y., Thermal donor formation by the agglomeration of oxygen in silicon, Defects in Semiconductors II, Symposium Proceedings (1983), pp. 153 - 7 .
    (last updated on 2007/04/10)

    Abstract:
    The authors suggest that thermal donor formation in silicon involves fast-diffusing, gas-like molecular oxygen in dynamical equilibrium with atomic oxygen in interstitial position. They discuss still remaining difficulties in understanding thermal donor formation in the light of recent experimental observations by Stavola et al. (1983), indicating that the diffusivity of interstitial oxygen apparently depends on the thermal history of the silicon sample

    Keywords:
    diffusion in solids;elemental semiconductors;impurity electron states;interstitials;oxygen;precipitation;silicon;