Papers Published

1. Zimmermann, H. and Gosele, U. and Tan, T.Y., Diffusion of Fe in InP via the kick-out mechanism, Appl. Phys. Lett. (USA), vol. 62 no. 1 (1993), pp. 75 - 7 [1.108832] .
   (last updated on 2007/04/10)

   Abstract:
   The diffusion of iron in indium phosphide is found to proceed via the kick-out diffusion mechanism. A Fe diffusion profile in InP available from the literature is simulated using the complete set of three partial differential equations for the kick-out mechanism. A value for the contribution of indium self-interstitials to the self-diffusion coefficient of InP is extracted and found to be much smaller than the known self-diffusion coefficient determined from indium tracer diffusion measurements. Possible reasons for the observed difference are discussed. Furthermore, an analogy of diffusion in InP to diffusion in GaAs is suggested

   Keywords:
   diffusion in solids;III-V semiconductors;indium compounds;interstitials;iron;partial differential equations;self-diffusion in solids;