- Tan, T. Y. and Tice, W. K., OXYGEN PRECIPITATION AND THE GENERATION OF DISLOCATIONS IN SILICON.,
Philosophical Magazine, vol. 34 no. 4
pp. 615 - 631 .
(last updated on 2007/04/10)
Oxygen-rich precipitates in silicon, and the generation of dislocations at the interfaces between the precipitates and the matrix were observed. The precipitates are square shaped plates. Prismatic dislocation loops are generated in silicon by the mechanism of prismatic punching. The loops are identified as interstitial loops. The loop nucleation process is identified for the first time for a system completely under internal stress.
SILICON AND ALLOYS;