Papers Published

  1. Tan, T. Y. and Kung, C. Y., ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION., Proceedings - The Electrochemical Society, vol. 86-4 (1986), pp. 864 - 873 .
    (last updated on 2007/04/10)

    Abstract:
    We describe the nature of an exigent-accommodation-volume factor associated with oxygen (O//i) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO//2 precipitate nucleation and growth phenomena. Employing this factor, we describe the possible explanations of two outstanding features of O//i precipitation in CZ Si: the precipitation retardation/recovery and the nucleation incubation phenomena.

    Keywords:
    INTEGRATED CIRCUIT MANUFACTURE;OXYGEN;