- Tan, T.Y. and Tice, W.K., Oxygen precipitation and the generation of dislocations in silicon,
Philos. Mag. (UK), vol. 34 no. 4
pp. 615 - 31 .
(last updated on 2007/04/10)
Oxygen-rich precipitates in silicon, and the generation of dislocations at the interfaces between the precipitates and the matrix were observed. The precipitates are square-shaped plates with 〈110〉 sides and 100 habit planes. Prismatic dislocation loops are generated in silicon by the mechanism of prismatic punching. The loops are identified as interstitial loops with 1/2 〈110〉 Burgers vectors and 〈110〉 axis. An ideal loop is rhombus-shaped with line senses in 〈112〉 directions. Nucleation of loops follows the mechanism of Ashby and Johnson (1969): a shear loop is nucleated on an initial slip plane and completes a rhombus-shaped prismatic loop by repeated cross-slips. The loop nucleation process is identified, probably for the first time, for a system completely under internal stress
dislocations;elemental semiconductors;oxygen;precipitation;semiconductor defects;silicon;