Papers Published

  1. Schmid, P.E. and Ho, P.S. and Tan, T.Y., Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces, J. Vac. Sci. Technol. (USA), vol. 20 no. 3 (1982), pp. 688 - 9 [1.571629] .
    (last updated on 2007/04/10)

    Summary form only given. The authors investigate to what extent the stoichiometry and microstructure of the bulk silicide affect the Schottky barrier height (SHB) at the interface by measuring the SHB of Ni and Pd silicide-Si interfaces focused on (100) and (111) substrates

    interface structure;nickel compounds;palladium compounds;Schottky effect;silicon;