- Tan, T.Y., Intrinsic point defects and diffusion processes in silicon,
Electron Microscopy of Materials Symposium
pp. 127 - 41 .
(last updated on 2007/04/10)
Reviews recent progress in understanding the role of vacancies (V) and self-interstitials (I) in self- and impurity diffusion in Si. Surface oxidation perturbs the thermal equilibrium concentration of point defects and analyses of the resulting effects on dopant diffusion showed that both V and I are present. Developments in experimental and theoretical works on Au diffusion in Si yielded a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. It is hoped that the I and V thermal equilibrium concentrations may be determined in the near future. A number of important physical aspects of the anomalous diffusion of P are now understood but a basically satisfactory model may need further work
diffusion in solids;elemental semiconductors;interstitials;oxidation;self-diffusion in solids;silicon;vacancies (crystal);